Newsletter-Autumn 2024
With the rapid development of artificial intelligence technologies, the industry has been buzzing with major AI-related developments - such as Jensen Huang’s launch of AI supercomputer platforms and Elon Musk’s introduction of home robots. Humanity is entering a new era where we coexist closely with machines, and may soon become fully reliant on them.
To truly bring these intelligent devices to life, a stable and sustainable green energy supply is essential. Therefore, accelerating the development of diverse energy sources has become an urgent and critical task.
Firstohm has long been deeply involved in industrial applications and green energy solutions, with solid product planning and market presence. In this issue, we share updates on our latest efforts and progress in green energy applications.
Electronica 2024 in Delhi and Munich
★ September 11–13, 2024: electronica India
Location: India Expo Centre, Greater Noida, Delhi NCR, India
Booth Number: H10.G61 (Hall 10, Booth G61)
★ November 12–15, 2024: electronica Munich, Germany
Estimated annual solar power generation: 350,747 kWh, equivalent to the yearly electricity usage of approximately 100 households in Taiwan.
★ 2024 Updated Company Profile and Product Catalog Released on June 30
★The Technical Advantages of MELF Resistors in IGBT Gate Resistor Applications
IGBT（Insulated Gate Bipolar Transistor）is a power semiconductor device that combines the high input impedance of MOSFETs with the low conduction voltage of BJTs, making it widely used in power electronics. The gate resistor (Rg) is a crucial component in the IGBT gate drive circuit, primarily controlling the switching speed and reducing switching noise.
The selection of the gate resistor is critical to ensuring the stable operation and long-term reliability of the IGBT. In this application, MELF resistors demonstrate several significant technical advantages:
• Low Parasitic Inductance and Capacitance: MELF resistors have exceptionally low parasitic inductance and capacitance, which are crucial for signal integrity in high-speed switching applications. This low parasitic effect helps reduce signal distortion during switching, thus enhancing overall system performance.
• High Stability and Temperature Resistance: The high stability and temperature resistance of MELF resistors allow them to maintain a consistent resistance value even in high power density and extreme operating environments. This ensures that the IGBT can handle high power and thermal stress, ensuring circuit reliability and longevity.
• Precision Manufacturing and Excellent Temperature Coefficient: These features enable precise control of gate voltage, helping to improve switching efficiency, reduce power loss, and enhance overall system energy efficiency.
In summary, MELF resistors offer an ideal solution for IGBT gate resistor applications, thanks to their low parasitic effects, high-temperature stability, and precise resistance control. Firstohm’s MELF resistor solutions meet the high-performance and reliability demands of today’s power electronics industry, helping you stay ahead in the technical competition.
※Applications:
1. Electric Vehicles
2. Solar Inverters
3. Charging Stations
4. Energy Storage Systems
5. Industrial Power Supplies
※Recommend MELF Resistors:
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What's New At Firstohm-Autumn 2024
The advantage of using MELF resistors for IGBT Gate resistors
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